DocumentCode :
1145309
Title :
A 25-GHz emitter degenerated LC VCO
Author :
Zhan, Jing-Hong Conan ; Duster, Jon S. ; Kornegay, Kevin T.
Author_Institution :
Cornell Univ., Ithaca, NY, USA
Volume :
39
Issue :
11
fYear :
2004
Firstpage :
2062
Lastpage :
2064
Abstract :
A 25-GHz emitter degenerated bipolar LC voltage-controlled oscillator (VCO) designed in IBM´s SiGe 6 HP BiCMOS process (fT∼47 GHz) is presented. Including output buffers, the VCO occupies an area of 435 μm×225 μm and consumes 22 mW at a 1.9-V power supply. The phase noise at 1 MHz offset is -93 dBc/Hz and it achieves a high fOSC/fT ratio with a figure of merit of 174 dB.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; voltage-controlled oscillators; 1.9 V; 22 mW; 25 GHz; BiCMOS process; SiGe; bipolar LC voltage-controlled oscillator; emitter degenerated LC VCO; oscillation frequency; output buffers; phase noise; tuning range; BiCMOS integrated circuits; Circuit topology; Equations; Frequency; Germanium silicon alloys; Impedance; Phase noise; Silicon germanium; Tail; Voltage-controlled oscillators; VCO; Voltage-controlled oscillator; emitter degeneration; oscillation frequency; phase noise; tuning range;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2004.835839
Filename :
1347339
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1145309
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