The role of carrier transport on the current injection efficiency of InGaAsN quantum-well lasers

Author

Yeh, Jeng-Ya ; Mawst, Luke J. ; Tansu, Nelson

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI, USA

Volume

17

Issue

9

fYear

2005

Firstpage

1779

Lastpage

1781

Abstract

A theoretical and experimental study demonstrates that the current injection efficiency of InGaAsN quantum-well (QW) lasers can be significantly affected by carrier transport in the separate confinement heterostructure (SCH) region. An offset QW design is utilized to show the impact of hole transport on the temperature dependence of the external differential quantum efficiency and above threshold injection efficiency. A reduction of the current injection efficiency is found for structures which have significant hole transport times in the SCH.

Keywords

III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; quantum well lasers; semiconductor device models; wide band gap semiconductors; InGaAsN; InGaAsN quantum-well lasers; carrier transport; current injection efficiency; differential quantum efficiency; hole transport; separate confinement heterostructure; Gallium arsenide; Laser modes; Laser theory; Optical design; Pulsed laser deposition; Quantum well lasers; Radiative recombination; Temperature dependence; Temperature sensors; Threshold current; Current injection efficiency; InGaAsN; long wavelength quantum-well (QW) laser; material gain; temperature sensitivity; thermionic carrier leakage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.852331

Filename

1498856