Title :
The role of carrier transport on the current injection efficiency of InGaAsN quantum-well lasers
Author :
Yeh, Jeng-Ya ; Mawst, Luke J. ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI, USA
Abstract :
A theoretical and experimental study demonstrates that the current injection efficiency of InGaAsN quantum-well (QW) lasers can be significantly affected by carrier transport in the separate confinement heterostructure (SCH) region. An offset QW design is utilized to show the impact of hole transport on the temperature dependence of the external differential quantum efficiency and above threshold injection efficiency. A reduction of the current injection efficiency is found for structures which have significant hole transport times in the SCH.
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; quantum well lasers; semiconductor device models; wide band gap semiconductors; InGaAsN; InGaAsN quantum-well lasers; carrier transport; current injection efficiency; differential quantum efficiency; hole transport; separate confinement heterostructure; Gallium arsenide; Laser modes; Laser theory; Optical design; Pulsed laser deposition; Quantum well lasers; Radiative recombination; Temperature dependence; Temperature sensors; Threshold current; Current injection efficiency; InGaAsN; long wavelength quantum-well (QW) laser; material gain; temperature sensitivity; thermionic carrier leakage;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.852331
