Title :
Carrier recombination influence on the SOIMOSFET floating body effect
Author :
Koh, R. ; Mogami, T.
Author_Institution :
Microelectron. Res. Labs., NEC Corp., Kanagawa, Japan
Abstract :
The carrier recombination influence on the floating body effect for fully depleted n-channel SOIMOSFET was analyzed by device simulation. It was found that the hole diffusion to the source electrode is negligibly small and that the surface recombination for the generated hole dominates the hole extinction, at the subthreshold region. Based on the simulated result, an analytical model on the hole concentration is proposed, in which the recombination velocity is explicitly included. The model explains the hole concentration behavior that is responsible for the floating body effect for the fully depleted SOIMOSFET.<>
Keywords :
electron-hole recombination; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; analytical model; carrier recombination; device simulation; floating body effect; fully depleted n-channel SOIMOSFET; hole concentration; hole diffusion; surface recombination; Analytical models; Character generation; Charge carrier processes; Diodes; Electrodes; FETs; Silicon; Spontaneous emission; Voltage;
Journal_Title :
Electron Device Letters, IEEE
