Title :
Ultrahigh and controllable drain current peak-to-valley ratio in negative resistance field-effect transistors with a strained InGaAs channel
Author :
Lai, Jiun-Tsuen ; Lee, Joseph Ya-min
Author_Institution :
Dept. of Electr. Eng., Tsing-Hua Univ., Hsinchu, Taiwan
Abstract :
Negative resistance field-effect transistor (NERFET) devices using either strained InGaAs or unstrained GaAs channel layers have been fabricated. The strained InGaAs channel NERFET´s show strong negative differential resistance and large drain current peak-to-valley ratio. The peak-to-valley ratio of the InGaAs channel NERFET is more than 3000 at room temperature and larger than one million (10/sup 6/) at 77 K. The peak-to-valley ratio is controllable by adjusting the collector voltage.<>
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; hot electron transistors; indium compounds; negative resistance; 300 K; 77 K; InGaAs; NERFET; collector voltage; drain current peak-to-valley ratio; negative differential resistance; negative resistance field-effect transistors; strained InGaAs channel; unstrained GaAs channel; Electrons; FETs; Fabrication; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Ohmic contacts; Substrates; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
