Title :
On the frequency-dependent capacitance of the nitride-oxide-nitride capacitor
Author :
Cohen, S.S. ; Gildenblat, G.Sh.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
We study the frequency response of the metal-insulator-metal (MIM) capacitor that has recently been evaluated as a voltage-programmable link (VPL). The nitride-oxide-nitride (NON) insulator, comprises a sandwich of a nearly stoichiometric silicon dioxide interposed between two like layers of silicon-rich silicon nitride. A unique frequency dependence displayed by the present structure has its origin in the rather leaky nature of the nitride component. A significant capacitance reduction at high operating frequencies is realized, leading to increased device speed.<>
Keywords :
capacitance; frequency response; metal-insulator-metal structures; nitridation; stoichiometry; thin film capacitors; capacitance reduction; device speed; field programmable gate arrays; frequency dependence; frequency response; frequency-dependent capacitance; high operating frequencies; leaky nature; like layers; metal-insulator-metal capacitor; nitride component; nitride-oxide-nitride capacitor; nitride-oxide-nitride insulator; silicon-rich silicon nitride; stoichiometric silicon dioxide; voltage-programmable link; Capacitance; Current-voltage characteristics; Dielectrics; Fabrication; Frequency response; Insulation; MIM capacitors; Semiconductor films; Silicon compounds; Voltage;
Journal_Title :
Electron Device Letters, IEEE
