Title :
Nitride-based LEDs with MQW active regions grown by different temperature profiles
Author :
Chang, Shoou-Jinn ; Wei, S.C. ; Su, Y.K. ; Chuang, R.W. ; Chen, S.M. ; Li, W.L.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Nitride-based light-emitting diodes (LEDs) with multiple quantum-well active regions were separately prepared by metal-organic vapor phase epitaxy in different temperature profiles. Compared with conventional samples, the reduced reverse leakage current and improved electrostatic discharge characteristics of the LEDs can both be achieved using temperature ramping and temperature cycling methods. However, using the temperature ramping may degrade the optical properties of devices due to desorption of In atoms and/or impurity incorporation. With an emission wavelength of 465 nm, the 20-mA output powers measured were 5.5, 6.0, and 7.9 mW for temperature ramping LED, conventional LED, and temperature cycling LED, respectively.
Keywords :
MOCVD; desorption; indium; light emitting diodes; quantum well devices; semiconductor doping; semiconductor growth; temperature distribution; vapour phase epitaxial growth; wide band gap semiconductors; 20 mA; 465 nm; 5.5 mW; 6.0 mW; 7.9 mW; In atom desorption; MQW active regions; electrostatic discharge; impurity incorporation; light-emitting diodes; metal-organic vapor phase epitaxy; nitride-based LED; reverse leakage current; temperature cycling; temperature ramping; Atom optics; Degradation; Electrostatic discharge; Epitaxial growth; Leakage current; Light emitting diodes; Optical devices; Quantum well devices; Stimulated emission; Temperature; InGaN–GaN; light-emitting diode (LED); multiple quantum-well (MQW); temperature cycling;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.853270
