P-N double quantum well resonant interband tunneling diode with peak-to-valley current ratio of 144 at room temperature

Author

Tsai, H.H. ; Su, Y.K. ; Lin, H.H. ; Wang, R.-L. ; Lee, T.L.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

15

Issue

9

fYear

1994

Firstpage

357

Lastpage

359

Abstract

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 /spl Aring/ to 30 /spl Aring/ on the device characteristics is also studied.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; negative resistance; resonant tunnelling devices; tunnel diodes; 10 to 30 A; InAlAs-InGaAs; P-N double quantum well RTD; RIT diodes; central barrier thickness; current-voltage characteristics; peak-to-valley current ratio; resonant interband tunneling diode; Current-voltage characteristics; Heterojunctions; Molecular beam epitaxial growth; P-n junctions; Photonic band gap; Resonance; Resonant tunneling devices; Semiconductor diodes; Temperature; Thermionic emission;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.311133

Filename

311133