Title :
P-N double quantum well resonant interband tunneling diode with peak-to-valley current ratio of 144 at room temperature
Author :
Tsai, H.H. ; Su, Y.K. ; Lin, H.H. ; Wang, R.-L. ; Lee, T.L.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 /spl Aring/ to 30 /spl Aring/ on the device characteristics is also studied.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; negative resistance; resonant tunnelling devices; tunnel diodes; 10 to 30 A; InAlAs-InGaAs; P-N double quantum well RTD; RIT diodes; central barrier thickness; current-voltage characteristics; peak-to-valley current ratio; resonant interband tunneling diode; Current-voltage characteristics; Heterojunctions; Molecular beam epitaxial growth; P-n junctions; Photonic band gap; Resonance; Resonant tunneling devices; Semiconductor diodes; Temperature; Thermionic emission;
Journal_Title :
Electron Device Letters, IEEE
