High-performance emitter-up/down SiGe HBT´s

Author

Burghartz, Joachim N. ; Jenkins, Keith A. ; Grützmacher, Detlev A. ; Sedgwick, Thomas O. ; Stanis, Carol L.

Author_Institution

Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

15

Issue

9

fYear

1994

Firstpage

360

Lastpage

362

Abstract

The experimental results in this paper provide evidence of high-performance symmetric and emitter-down operation of SiGe-HBT´s. SiGe-base transistors were fabricated by using Atmospheric-Pressure Chemical Vapor Deposition (APCVD) for the epitaxial growth of SiGe and Si layers, and a novel self-aligned device structure. Current gains of 2000 and 120, cutoff-frequencies of 64 GHz and 14 GHz, and maximum oscillation frequencies of 23 GHz and 10 GHz have been achieved for emitter-up and emitter-down operation, respectively.<>

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; ion implantation; semiconductor growth; semiconductor materials; silicon; solid-state microwave devices; vapour phase epitaxial growth; 10 to 64 GHz; HBT; SHF; Si-SiGe; SiGe-base transistors; atmospheric-pressure CVD; chemical vapor deposition; emitter-down operation; emitter-up operation; epitaxial growth; self-aligned device structure; Bipolar transistors; Chemical vapor deposition; Circuits; Cutoff frequency; Doping; Epitaxial growth; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.311134

Filename

311134