Title :
High-performance emitter-up/down SiGe HBT´s
Author :
Burghartz, Joachim N. ; Jenkins, Keith A. ; Grützmacher, Detlev A. ; Sedgwick, Thomas O. ; Stanis, Carol L.
Author_Institution :
Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The experimental results in this paper provide evidence of high-performance symmetric and emitter-down operation of SiGe-HBT´s. SiGe-base transistors were fabricated by using Atmospheric-Pressure Chemical Vapor Deposition (APCVD) for the epitaxial growth of SiGe and Si layers, and a novel self-aligned device structure. Current gains of 2000 and 120, cutoff-frequencies of 64 GHz and 14 GHz, and maximum oscillation frequencies of 23 GHz and 10 GHz have been achieved for emitter-up and emitter-down operation, respectively.<>
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; ion implantation; semiconductor growth; semiconductor materials; silicon; solid-state microwave devices; vapour phase epitaxial growth; 10 to 64 GHz; HBT; SHF; Si-SiGe; SiGe-base transistors; atmospheric-pressure CVD; chemical vapor deposition; emitter-down operation; emitter-up operation; epitaxial growth; self-aligned device structure; Bipolar transistors; Chemical vapor deposition; Circuits; Cutoff frequency; Doping; Epitaxial growth; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium;
Journal_Title :
Electron Device Letters, IEEE
