Title :
Optimization of series resistance in sub-0.2 μm SOI MOSFET´s
Author :
Su, L.T. ; Sherony, M.J. ; Hang Hu ; Chung, J.E. ; Antoniadis, D.A.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
The optimization of device series resistance in ultrathin film SOI devices is studied through 3-D simulations and process experiments. The series resistance is dependent on the contact resistivity of the silicide to silicon and the silicide geometry. To achieve low series resistance, very thin silicides that do not fully consume the SOI film are needed. A novel cobalt salicidation technology using titanium/cobalt laminates is used to demonstrate sub-0.2 μm, thin-film SOI devices with excellent performance and very low device series resistance.
Keywords :
cobalt compounds; electric resistance; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; simulation; 0.2 micron; 3D simulations; Co salicidation technology; CoSi/sub 2/-TiSi/sub 2/; SOI MOSFET; Si-SiO/sub 2/; Ti/Co laminates; contact resistivity; process experiments; series resistance optimisation; silicide geometry; sub-0.2 /spl mu/m SOI MOSFETs; ultrathin film SOI devices; Cobalt; Conductivity; Contact resistance; Immune system; MOSFET circuits; Medical simulation; Semiconductor films; Silicides; Silicon; Thin film devices;
Journal_Title :
Electron Device Letters, IEEE
