Title :
NVM characteristics of single-MOSFET cells using nitride spacers with gate-to-drain NOI
Author :
Hsieh, Chien-Sheng ; Kao, Pai-Chu ; Chiu, Chia-Sung ; Hon, Chih-Hsueh ; Fan, Chen-Chia ; Kung, Wei-Chain ; Wang, Zih-Wun ; Jeng, Erik S.
Author_Institution :
Dept. of Electron. Eng., Chun-Yuan Christian Univ., Chun-Li, Taiwan
Abstract :
This work presents the characteristics of a two-bit-per-cell charge-trapping nonvolatile memory (NVM) device by using gate-to-drain nonoverlapped implanted (NOI) n-MOSFETs. Hot carriers are generated in NOI devices and injected into the silicon nitride spacers. The characteristics of this potential single-transistor NVM cell, including two-bit operation, programming and erasing characteristics, are investigated. Their stability and reliability characteristics such as retention, disturbance and cycling are also evaluated.
Keywords :
MOSFET circuits; hot carriers; memory architecture; silicon compounds; NVM characteristics; charge-trapping nonvolatile memory; gate-to-drain NOI; hot carrier effect; nitride spacers; nonoverlapped implanted nMOSFET; reliability characteristics; single-MOSFET cells; stability characteristic; two-bit operation; CMOS logic circuits; CMOS process; Costs; Fabrication; Hot carrier effects; Hot carriers; Logic devices; MOSFET circuits; Nonvolatile memory; Silicon compounds; Charge trapping; NVM; hot carrier effect; nonvolatile memory;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.836796
