NVM characteristics of single-MOSFET cells using nitride spacers with gate-to-drain NOI

Author

Hsieh, Chien-Sheng ; Kao, Pai-Chu ; Chiu, Chia-Sung ; Hon, Chih-Hsueh ; Fan, Chen-Chia ; Kung, Wei-Chain ; Wang, Zih-Wun ; Jeng, Erik S.

Author_Institution

Dept. of Electron. Eng., Chun-Yuan Christian Univ., Chun-Li, Taiwan

Volume

51

Issue

11

fYear

2004

Firstpage

1811

Lastpage

1817

Abstract

This work presents the characteristics of a two-bit-per-cell charge-trapping nonvolatile memory (NVM) device by using gate-to-drain nonoverlapped implanted (NOI) n-MOSFETs. Hot carriers are generated in NOI devices and injected into the silicon nitride spacers. The characteristics of this potential single-transistor NVM cell, including two-bit operation, programming and erasing characteristics, are investigated. Their stability and reliability characteristics such as retention, disturbance and cycling are also evaluated.

Keywords

MOSFET circuits; hot carriers; memory architecture; silicon compounds; NVM characteristics; charge-trapping nonvolatile memory; gate-to-drain NOI; hot carrier effect; nitride spacers; nonoverlapped implanted nMOSFET; reliability characteristics; single-MOSFET cells; stability characteristic; two-bit operation; CMOS logic circuits; CMOS process; Costs; Fabrication; Hot carrier effects; Hot carriers; Logic devices; MOSFET circuits; Nonvolatile memory; Silicon compounds; Charge trapping; NVM; hot carrier effect; nonvolatile memory;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.836796

Filename

1347399