Optimization of the nonoverlap length in decanano MOS devices with 2-D QM simulations

Author

Gusmeroli, Ricardo ; Spinelli, Alessandro S. ; Pirovano, Agostino ; Lacaita, Andrea L. ; Boeuf, F. ; Skotnicki, Thomas

Author_Institution

Dipt. di Elettronica e Informazione, Politecnico di Milano, Milan, Italy

Volume

51

Issue

11

fYear

2004

Firstpage

1849

Lastpage

1855

Abstract

Two-dimensional quantum-mechanical simulations of nonoverlapped MOS devices are presented, and validated through comparison against experimental data. Simulations are used to highlight the electrical characteristics of these devices, explore their design tradeoffs and optimize the performance with respect to the nonoverlap length. Simulations show that a minimum switching time is always achieved by adopting a nonoverlapped structure if the MOS device is operating properly. This approach can effectively improve the performance of decananometer MOSFETs.

Keywords

MIS devices; optimisation; semiconductor device models; 2D quantum-mechanical simulations; decananometer MOSFET; design tradeoffs; electrical characteristics; nonoverlap length; nonoverlapped MOS devices; semiconductor device modeling; switching time; Capacitance; Design optimization; Electric variables; MOS devices; MOSFETs; Manufacturing industries; Nanoscale devices; Quantization; Semiconductor device modeling; Solid modeling; MOS devices; S/D; overlap; quantization; semiconductor device modeling; source/drain;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.837124

Filename

1347404