Title :
Unipolar Logic Gates Based on Spatial Wave-Function Switched FETs
Author :
Karmakar, Supriya ; Chandy, John A. ; Jain, Faquir C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Connecticut, Storrs, CT, USA
Abstract :
The spatial wave-function switched field-effect transistor (SWSFET) has two or three low bandgap quantum well channels that can conduct carrier flow from source to drain of the SWSFET. Because of this property, SWSFETs are useful to implement different multivalued logic with reduced device count. In this paper, we introduce the circuit model of a SWSFET and the design of a unipolar inverter where only one kind of charge carrier contributes to the current flow. We also simulate two input unipolar logic gates such as NAND and NOR and demonstrate their universal property to implement other unipolar logic gates. We also simulate NOR gate and full adder circuits based on unipolar logic gates.
Keywords :
NAND circuits; NOR circuits; adders; field effect transistors; invertors; logic gates; multivalued logic circuits; semiconductor quantum wells; NAND gate; NOR gate; SWSFET; adder circuit; low bandgap quantum well channel; multivalued logic; reduced device count; spatial wave-function switched field-effect transistor; unipolar inverter design; unipolar logic gate; Charge carriers; Field effect transistors; Integrated circuit modeling; Inverters; Logic gates; Threshold voltage; Integrated circuit; VLSI; VLSI.; spatial wave-function switched FET (SWSFET); unipolar logic circuit;
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
DOI :
10.1109/TVLSI.2014.2320912
