Electrical characterization of polymer-based FETs fabricated by spin-coating poly(3-alkylthiophene)s

Author

Deen, M. Jamal ; Kazemeini, Mehdi H. ; Haddara, Yaser M. ; Yu, Jianfei ; Vamvounis, George ; Holdcroft, Steven ; Woods, William

Author_Institution

Electr. & Comput. Eng. Dept., McMaster Univ., Hamilton, Ont., Canada

Volume

51

Issue

11

fYear

2004

Firstpage

1892

Lastpage

1901

Abstract

The current-voltage (I-V) characteristics of two different polymer thin-film transistors (TFTs), based on spin-coating of poly(3-hexylthiophene)-P3HT and poly(3-hexadecylthiophene)-P3HDT, are studied. A model is developed to interpret the results and to explain the differences between these two polymers. Various parameters of the semiconducting polymers, including bulk mobility, field-effect mobility, trap density, and unintentional dopant concentration are estimated. The model takes into account the domination of the bulk current over the channel current in the subthreshold regime as well as the effects of the depletion layer as parasitic resistances in series with the channel resistance. Furthermore, the effects of the films thickness on the electrical characteristics of these TFTs are discussed. Compared to the P3HT, the P3HDT-based TFT has a lower subthreshold slope, higher on current ratio, and higher field-effect mobility.

Keywords

field effect transistors; organic compounds; polymer films; spin coating; thin film transistors; bulk current; bulk mobility; channel current; channel resistance; current-voltage characteristics; depletion layer; electrical characterization; field-effect mobility; films thickness; organic transistors; parasitic resistances; poly(3-hexadecylthiophene)-P3HDT; poly(3-hexylthiophene)-P3HT; polymer semiconductors; polymer thin-film transistors; polymer-based FET; semiconducting polymers; spin coating; subthreshold regime; trap density; unintentional dopant concentration; Electric resistance; Electric variables; FETs; Fabrication; Helium; Immune system; Polymer films; Semiconductivity; Semiconductor process modeling; Thin film transistors; Charge transport; PFET; TFTs; electrical characterization of PFETs; organic transisors; polymer FET; polymer transistor fabrication; polymer transistors; thin-film transistors; transport in polymer semiconductors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.837389

Filename

1347409