Characteristics of an InP-InGaAs-InGaAsP HBT

Author

Chen, Jing-Yuh ; Cheng, Shiou-Ying ; Chen, Chun-Yuan ; Lee, Kuan-Ming ; Yen, Chih-Hung ; Fu, Ssu-Yi ; Tsai, Sheng-Fu ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

51

Issue

11

fYear

2004

Firstpage

1935

Lastpage

1938

Abstract

The dc characteristics of an interesting heterojunction bipolar transistor with an InGaAs-InGaAsP composite-collector structure are studied and reported. Due to the insertion of an InGaAsP setback layer at the base-emitter heterojunction, the potential spikes as well as the electron blocking effect are suppressed significantly. In addition, the presence of an effective base-collector homojunction substantially reduces the current blocking effect. The studied device shows good dc performances including the small offset and saturation voltage without degrading the breakdown behavior. A typical dc current gain of 118 and the desired current amplification over 11 decades of the magnitude of collector current I_C are obtained.

Keywords

gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; HBT; InP-InGaAs-InGaAsP; base-collector homojunction; base-emitter heterojunction setback layer; composite-collector structure; current blocking effect reduction; current gain; device breakdown; device offset; electron blocking effect; heterojunction bipolar transistor; potential spike suppression; saturation voltage; Breakdown voltage; Degradation; Double heterojunction bipolar transistors; Electric breakdown; Electrons; Heterojunction bipolar transistors; Indium phosphide; MOCVD; Optoelectronic devices; Potential well; Breakdown; CC; HBT; composite-collector; electron blocking; heterojunction bipolar transistor; potential spike;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.836549

Filename

1347415