Title :
Characteristics of an InP-InGaAs-InGaAsP HBT
Author :
Chen, Jing-Yuh ; Cheng, Shiou-Ying ; Chen, Chun-Yuan ; Lee, Kuan-Ming ; Yen, Chih-Hung ; Fu, Ssu-Yi ; Tsai, Sheng-Fu ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
The dc characteristics of an interesting heterojunction bipolar transistor with an InGaAs-InGaAsP composite-collector structure are studied and reported. Due to the insertion of an InGaAsP setback layer at the base-emitter heterojunction, the potential spikes as well as the electron blocking effect are suppressed significantly. In addition, the presence of an effective base-collector homojunction substantially reduces the current blocking effect. The studied device shows good dc performances including the small offset and saturation voltage without degrading the breakdown behavior. A typical dc current gain of 118 and the desired current amplification over 11 decades of the magnitude of collector current IC are obtained.
Keywords :
gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; HBT; InP-InGaAs-InGaAsP; base-collector homojunction; base-emitter heterojunction setback layer; composite-collector structure; current blocking effect reduction; current gain; device breakdown; device offset; electron blocking effect; heterojunction bipolar transistor; potential spike suppression; saturation voltage; Breakdown voltage; Degradation; Double heterojunction bipolar transistors; Electric breakdown; Electrons; Heterojunction bipolar transistors; Indium phosphide; MOCVD; Optoelectronic devices; Potential well; Breakdown; CC; HBT; composite-collector; electron blocking; heterojunction bipolar transistor; potential spike;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.836549
