Title :
Transport equation approach for heterojunction bipolar transistors
Author :
Tomizawa, Kazutaka ; Pavlidis, Dimitris
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
3/1/1990 12:00:00 AM
Abstract :
Transport equations for particle, momentum, and energy densities in two conduction bands are applied to a self-consistent numerical simulation of heterojunction bipolar transistors. Simple formulas for the relaxation frequencies, by which the variation of the conduction band energy and doping concentration in a heterojunction device are easily taken into account, are proposed. The electron transport in the AlGaAs/GaAs heterojunction bipolar transistor with two different collector structures is analyzed and discussed
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; numerical methods; semiconductor device models; AlGaAs-GaAs transistor; HBT model; collector structures; conduction bands; doping concentration; electron transport; energy densities; heterojunction bipolar transistors; relaxation frequencies; self-consistent numerical simulation; semiconductor; Bipolar transistors; Doping; Electrons; Equations; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Monte Carlo methods; Transient analysis;
Journal_Title :
Electron Devices, IEEE Transactions on
