Title :
Germanium-diffused waveguides in silicon for lambda =1.3 mu m and lambda =1.55 mu m with losses below 0.5 dB/cm
Author :
Schmidtchen, J. ; Schüppert, B. ; Splett, A. ; Petermann, K.
Author_Institution :
Inst. fuer Hochfrequenztech., Tech. Univ., Berlin, Germany
Abstract :
The authors present a simple technique for the fabrication of integrated optical channel waveguides that are prepared by indiffusion of an E-beam evaporated amorphous alloy of germanium and silicon into commercially available silicon with low dopant concentration, using only simple technological processes such as standard lithography, PVD, and diffusion. The waveguides are polarization independent and have waveguide losses as low as 0.3 dB/cm at wavelengths of lambda =1.3 mu m and lambda =1.55 mu m. The spot sizes are well suited for low-loss single-mode fiber device coupling, being on the order of a few microns in both horizontal and vertical directions.<>
Keywords :
diffusion in solids; elemental semiconductors; germanium; integrated optics; lithography; optical waveguides; optical workshop techniques; silicon; vapour deposition; 0.3 dB; 0.5 dB; 1.3 micron; 1.55 micron; E-beam evaporated amorphous alloy; Ge-diffused waveguides in Si; IR; PVD; Si:Ge; amorphous semiconductors; fibre coupling; indiffusion; integrated optical channel waveguides; low dopant concentration; low-loss single-mode fiber; optical losses; polarization independent; spot sizes; standard lithography; waveguide fabrication; waveguide losses; Amorphous materials; Germanium alloys; Germanium silicon alloys; Integrated optics; Lithography; Optical device fabrication; Optical fiber polarization; Optical waveguides; Silicon alloys; Silicon germanium;
Journal_Title :
Photonics Technology Letters, IEEE
