Title :
Electron velocity saturation in heterostructure field-effect transistors
Author :
Han, Chien-Jin ; Ruden, P.Paul ; Nohava, Thomas E. ; Narum, David H. ; Grider, David E. ; Newstrom, K. ; Joslyn, P. ; Shur, Michael S.
Author_Institution :
Honeywell Sensors & Signal Process. Lab., Bloomington, MN, USA
fDate :
3/1/1990 12:00:00 AM
Abstract :
Results on gate-length scaling of the performance of enhancement-mode heterostructure field-effect transistors (HFETs) for gate lengths of between 0.4 and 10 μm are reported. The devices studied were fabricated by a self-aligned gate process. Transconductances as large as 534 mS/mm were achieved with 0.4-μm devices. Two types of pseudomorphic AlGaAs/InGaAs/GaAs heterostructure are compared. One of them is used for modulation-doped FETs and the other for doped-channel FETs. It is found that the effects of electron velocity saturation are different for the two types of device due to the dominance of charge transfer and gate leakage in the conventional modulation-doped device. The experimental results are explained in the framework of a simple charge control model
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; field effect transistors; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; 0.4 to 10 micron; 534 mS; HFET; charge control model; charge transfer; doped-channel FETs; electron velocity saturation effect; enhancement-mode heterostructure field-effect transistors; gate leakage; gate lengths; gate-length scaling; modulation-doped FETs; pseudomorphic AlGaAs-InGaAs-GaAs heterostructure; self-aligned gate process; semiconductor; transconductance; Electrons; Epitaxial layers; FETs; Force sensors; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Signal processing; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
