DocumentCode :
1146333
Title :
High thermally induced index variations with short response time in InP/GalnAsP/InP waveguide Schottky diodes
Author :
Saadsaoud, N. ; Zegaoui, M. ; Decoster, D. ; Dogheche, E. ; Wallart, Xavier ; Chazelas, J.
Author_Institution :
Inst. d´Electron., de Microelectron. et de Nanotechnol., Univ. des Sci. et Technol. de Lille, Villeneuve d´Ascq, France
Volume :
45
Issue :
15
fYear :
2009
Firstpage :
802
Lastpage :
803
Abstract :
Thermally induced index variations as high as 0.1 were recorded in InP/GaAsInP1.15/InP waveguide Schottky diodes for 1 W/mm electrical power per electrode length. Pulse response characterisation showed almost 700 ns response time for 1 ??s square pulses under forward biased conditions (I = 20 mA, V = 300 mV).
Keywords :
Schottky diodes; arsenic compounds; gallium compounds; indium compounds; microwave devices; InP-GaInAsP-InP; pulse response characterisation; thermally-induced index variations; waveguide Schottky diodes;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2009.0696
Filename :
5173130
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1146333
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