• DocumentCode
    1146353
  • Title

    MR head wafer fabrication technology: current and future perspectives

  • Author

    Baubock, Gunther ; Dang, Huan Q. ; Hinson, David C. ; Rea, Laurence L. ; Kim, Young K.

  • Author_Institution
    Quantum Peripherals Colorado Inc., Louisville, CO, USA
  • Volume
    32
  • Issue
    1
  • fYear
    1996
  • fDate
    1/1/1996 12:00:00 AM
  • Firstpage
    25
  • Lastpage
    30
  • Abstract
    Areal storage densities and yield requirements continuously drive process optimizations in volume manufacturing of magnetoresistive (MR) heads. Several topics related to the manufacturability of MR heads are discussed. A dependable supply of MR sputter targets with low magnetostriction λs is critical. By using an internally developed technique, λs can be predicted to within ±1.0×10-7. MR film thickness uniformity can be improved by 60% by synchronizing the shutter activation with the substrate table. The profile of the photoresist for the read trackwidth definition is affected by initial exposure dose and post expose bake temperature. The use of mass-spectrometric and optical emission endpoint detection methods during ion beam etching of the MR layers allows a precise determination of the stopping point without overmilling into the layer underneath
  • Keywords
    magnetic heads; magnetic thin film devices; magnetoresistive devices; magnetostriction; photolithography; sputter etching; MR head; areal storage densities; endpoint detection methods; film thickness uniformity; initial exposure dose; ion beam etching; magnetoresistive heads; magnetostriction; manufacturability; photoresist; post expose bake temperature; read trackwidth definition; shutter activation; sputter targets; stopping point; wafer fabrication technology; yield requirements; Fabrication; Magnetic heads; Magnetoresistance; Magnetostriction; Manufacturing processes; Optical films; Particle beam optics; Resists; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.477545
  • Filename
    477545