Title :
Thermal Instability and Secondary Breakdown in Power Transistors
Author_Institution :
IBM Corporation Systems Development Division Kingston, N. Y. 12401
Abstract :
An analytic solution is obtained for the three-dimensional heat diffusion equation applied to a model for a multifinger power transistor. It predicts that the thermal instability takes place based on localized heating and positive feedback. The condition of thermal stability found by Navon and Miller [1] differs from that encountered in this paper.
Keywords :
Aluminum; Current density; Electric breakdown; Equations; Feedback; Heating; Power system modeling; Power transistors; Temperature dependence; Voltage;
Journal_Title :
Aerospace and Electronic Systems, IEEE Transactions on
DOI :
10.1109/TAES.1971.310223
