DocumentCode
1146384
Title
Thermal Instability and Secondary Breakdown in Power Transistors
Author
Wang, Paul P.
Author_Institution
IBM Corporation Systems Development Division Kingston, N. Y. 12401
Issue
6
fYear
1971
Firstpage
1195
Lastpage
1200
Abstract
An analytic solution is obtained for the three-dimensional heat diffusion equation applied to a model for a multifinger power transistor. It predicts that the thermal instability takes place based on localized heating and positive feedback. The condition of thermal stability found by Navon and Miller [1] differs from that encountered in this paper.
Keywords
Aluminum; Current density; Electric breakdown; Equations; Feedback; Heating; Power system modeling; Power transistors; Temperature dependence; Voltage;
fLanguage
English
Journal_Title
Aerospace and Electronic Systems, IEEE Transactions on
Publisher
ieee
ISSN
0018-9251
Type
jour
DOI
10.1109/TAES.1971.310223
Filename
4103875
Link To Document