Title :
Ultrafast, multi-THz-detuning, third-order frequency conversion in semiconductor quantum-well waveguides
Author :
Le, H.Q. ; Di Cecca, S.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
Abstract :
The near-band-edge resonance nonlinearity of semiconductor quantum wells has been used to obtain nondegenerate four-wave mixing over a multi-THz frequency detuning range, with large conversion efficiencies. In 1-mm-long, passive AlGaAs/GaAs single-quantum-well waveguides, conversion efficiencies up to -8.5 dB with relatively flat response have been observed over a 7.5-THz range (2.2% of the band gap). The nonlinearity is ultrafast and primarily reactive. The potential application of this technique to wavelength shifting devices is discussed.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; multiwave mixing; optical frequency conversion; optical waveguides; 1 mm; AlGaAs-GaAs; SQW; conversion efficiencies; frequency detuning range; large conversion efficiencies; multi-THz-detuning; near-band-edge resonance nonlinearity; nondegenerate four-wave mixing; semiconductor quantum wells; semiconductor quantum-well waveguides; single-quantum-well waveguides; third-order frequency conversion; tuning; ultrafast nonlinearity; wavelength shifting devices; Dynamic range; Four-wave mixing; Frequency conversion; Gallium arsenide; Optical waveguides; Probes; Pulse measurements; Quantum wells; Resonance; Semiconductor waveguides;
Journal_Title :
Photonics Technology Letters, IEEE
