Title :
The importance of contact injection in undoped AlGaAs/GaAs heterostructures
Author :
Li, Zhan-Ming ; Day, Derek J. ; McAlister, Sean P. ; Hurd, Colin M.
Author_Institution :
Nat. Res. Council of Canada, Ottawa, Ont., Canada
fDate :
3/1/1990 12:00:00 AM
Abstract :
A two-dimensional finite-difference analysis is used to simulate the current flow and charge distribution in undoped AlGaAs/GaAs MODFET structures called heterostructure insulated-gate field-effect transistors (HIGFETs). How an electron channel can be induced at the AlGaAs/GaAs interface when there is no doped supply layer is studied. The origins of the charge in this channel are studied by comparing its behavior in equilibrium with that when a current flows. By considering the different geometries of a Schottky gate and implanted source and drain contacts, the interrelationship between gate control and electron injection from the doped contact regions is shown and a graphic view of the origins of the interfacial charge in a HIGFET is given
Keywords :
III-V semiconductors; aluminium compounds; difference equations; gallium arsenide; high electron mobility transistors; insulated gate field effect transistors; semiconductor device models; HIGFET; MODFET structures; Schottky gate; charge distribution; contact injection; current flow simulation; drain contacts; electron channel; electron injection; heterostructure insulated-gate field-effect transistors; interfacial charge; modelling; semiconductors; two-dimensional finite-difference analysis; undoped AlGaAs-GaAs heterostructure; Analytical models; Electrons; FETs; Finite difference methods; Gallium arsenide; Geometry; Graphics; HEMTs; Insulation; MODFETs;
Journal_Title :
Electron Devices, IEEE Transactions on
