Title :
10-GHz power performance of a type II InP/GaAsSb DHBT
Author :
Caruth, D.C. ; Chu-Kung, B.F. ; Milton Feng
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
Abstract :
Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) were fabricated and microwave power performance was measured. For an InP collector thickness of 150 nm, the DHBTs show a current gain of 24, low offset voltages, and a BV/sub CEO/>6V. The 1.2×16 μm2 devices show fT=205GHz and fmax=106GHz at J/sub C/=304 kA/cm2. These devices delivered 12.6 dBm to the load at P/sub AVS/=3.3 dBm operating at 10 GHz, yielding a power-added efficiency of 41% and GT=9.3 dB.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; power bipolar transistors; 10 GHz; 150 nm; 9.3 dB; InP collector thickness; InP-GaAsSb; current gain; double heterojunction bipolar transistors; microwave power performance; offset voltages; power-added efficiency; type II InP-GaAsSb DHBT; wireless communication system; Current density; DH-HEMTs; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Power amplifiers; Power generation; Temperature; Voltage; Heterojunction bipolar transistors (HBTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.854355
