Enhancement of resolution and linearity control of contact-hole resist patterns with surface-active developer

Author

Shimada, Hiroki ; Shimomura, Shoji ; Au, R. ; Miyawaki, Manabu ; Ohmi, Tadahiro

Author_Institution

Dept. of Electron., Tohoku Univ., Sendai

Volume

7

Issue

3

fYear

1994

fDate

8/1/1994 12:00:00 AM

Firstpage

389

Lastpage

393

Abstract

The resolution enhancement of contact-hole resist patterns featuring precise linear correlation between mask size and resist-pattern size by employing a surface-active developer is presented. The addition of surfactant improves the wettability of the developer, thus enabling the solution to penetrate narrow spaces. The optimum surfactant concentration in developer leads to superior resist performance. This technology for contact-hole patterning results in high resolution, high sensitivity, and a wide process margin for ULSI manufacturing

Keywords

VLSI; integrated circuit technology; masks; photoresists; ULSI manufacturing; contact-hole resist patterns; linearity control; mask size; process margin; resist performance; resist-pattern size; resolution enhancement; sensitivity; surface-active developer; surfactant; wettability; Gold; Humidity measurement; Linearity; Lithography; Manufacturing processes; Resists; Size control; Space technology; US Department of Transportation; Ultra large scale integration;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.311343

Filename

311343