AlGaN/GaN HEMTs - operation in the K-band and above

Author

Smorchkova, Ioulia P. ; Wojtowicz, M. ; Sandhu, Rajinder ; Tsai, R. ; Barsky, M. ; Namba, C. ; Liu, P.-S. ; Dia, R. ; Truong, MinhDao ; Ko, D. ; Wang, J. ; Wang, H. ; Khan, A.

Author_Institution

TRW Space & Electron. Group, Redondo Beach, CA, USA

Volume

51

Issue

2

fYear

2003

fDate

2/1/2003 12:00:00 AM

Firstpage

665

Lastpage

668

Abstract

Reports on the power and microwave noise performance of AlGaN/GaN high electron-mobility transistors (HEMTs) at frequencies f>18 GHz (K- and Ka-bands). At 20 GHz, a record continuous-wave output power of 1.6 W has been achieved on an eight-finger 500-μm total gate-periphery device. At 29 GHz, a 120-μm gate-periphery device showed a pulsed output density of 1.6 W/mm with an associated gain of 6.7 dB and power-added efficiency of 26%. Minimum noise figure of 1.5 dB has been achieved on a 0.2 μm × 200 μm device at 26 GHz. The data demonstrate the viability of AlGaN/GaN HEMTs for high-frequency power and low-noise amplifier applications.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device noise; wide band gap semiconductors; 0.2 micron; 1.5 dB; 1.6 W; 18 to 20 GHz; 26 percent; 29 GHz; 500 micron; 6.7 dB; AlGaN-GaN; AlGaN/GaN; HEMTs; K-band; continuous-wave output power; gate-periphery device; low-noise amplifier; microwave noise performance; power performance; power-added efficiency; pulsed output density; Aluminum gallium nitride; Frequency; Gain; Gallium nitride; HEMTs; K-band; MODFETs; Microwave devices; Noise figure; Power generation;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2002.807683

Filename

1179394