In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

Author

Fu, L. ; Lever, P. ; Sears, K. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

Volume

26

Issue

9

fYear

2005

Firstpage

628

Lastpage

630

Abstract

We report the growth by low-pressure metal-organic chemical vapor deposition, fabrication, and characterization of ten-layer In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot infrared photodetectors. Normal incidence photoresponse of the detector was obtained at 5.9 μm. The 77-K peak responsivity was 5.6 mA/W with the detectivity D/sup */ of 1.2×10/sup 9/ cm/spl middot/Hz¹2//W at the bias of 0.4 V.

Keywords

MOCVD; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; 5.9 micron; In/sub 0.5/Ga/sub 0.5/As-GaAs; MOCVD; QDIP; metal-organic chemical vapor deposition; normal incidence photoresponse; quantum dot infrared photodetector; Chemical vapor deposition; Dark current; Gallium arsenide; Infrared detectors; MOCVD; Molecular beam epitaxial growth; Photodetectors; Quantum dots; Temperature; US Department of Transportation; Infrared photodetectors; metal–organic chemical vapor deposition (MOCVD); quantum dot infrared photodetectors (QDIPs); quantum dots;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.853635

Filename

1498980