Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFETs

Author

Hill, Winford Lee ; Vogel, Eric M. ; Misra, Veena ; McLarty, Peter K. ; Wortman, Jimmie J.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

43

Issue

1

fYear

1996

fDate

1/1/1996 12:00:00 AM

Firstpage

15

Lastpage

22

Abstract

The properties of oxynitride gate dielectrics formed using a low-pressure, rapid thermal chemical vapor deposition (RTCVD) process with SiH₄, NH₃, and N₂O as the reactive gases are presented. Material analyses show an increase of uniform nitrogen and interfacial hydrogen content with increasing NH₃/N₂O flow rate ratio. MOS capacitors with both n-type and p-type substrates and both n-channel and p-channel MOSFETs were analyzed electrically. The results show increasing fixed oxide charge and interface state density with increasing nitrogen and hydrogen content in the film. A decrease in peak transconductance and improved high-field transconductance was observed for n-channel MOSFETs. Improved resistance to hot-carrier interface state generation was also observed with increasing nitrogen concentration in the films. The results suggest that an optimal nitrogen concentration of approximately 3 at.% can be considered for further development of this technology

Keywords

MOS capacitors; MOSFET; chemical vapour deposition; dielectric thin films; hot carriers; interface states; rapid thermal processing; silicon compounds; MOS capacitors; MOSFETs; N₂O; NH₃; SiH₄; SiON; fixed oxide charge; high-field transconductance; hot-carrier interface state; interface state density; oxynitride gate dielectrics; peak transconductance; rapid thermal chemical vapor deposition; reactive gases; Chemical vapor deposition; Dielectric materials; Gases; Hydrogen; Interface states; MOS capacitors; MOSFETs; Nitrogen; Rapid thermal processing; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.477588

Filename

477588