Power-area evaluation of various double-gate RF mixer topologies

Author

Reddy, M.V.R. ; Sharma, D.K. ; Patil, M.B. ; Rao, Valipe Ramgopal

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Mumbai, India

Volume

26

Issue

9

fYear

2005

Firstpage

664

Lastpage

666

Abstract

We analyze the suitability of the double gate MOSFETs (DG MOSFETs) for RF-mixer applications from the point of optimizing the transconductance gain, power consumption, and area. Mixer topologies using the 0.13-μm conventional MOSFETs, simultaneously driven DG MOSFETs (SDDG) and the independently driven DG MOSFETs (IDDG) are compared using extensive device simulations. In the frequency range 1-40 GHz, our simulation results show that the mixer circuits realized using the SDDG technologies show an order of magnitude lower power-area product, for a given transconductance gain, compared to the conventional and the IDDG technologies.

Keywords

MOSFET; circuit simulation; mixers (circuits); network synthesis; power consumption; 0.13 micron; 1 to 40 GHz; DG MOSFET; FinFET; IDDG; RF-mixer application; SDDG; device simulation; double gate MOSFET; double-gate RF mixer topology; mixer circuit; power consumption; power-area evaluation; transconductance gain; CMOS technology; Circuit simulation; Circuit topology; Energy consumption; FinFETs; Isolation technology; MOSFETs; Radio frequency; Transconductance; Voltage; Device simulation; FinFET; MOSFET; RF-Mixer; double-gate MOSFET (DG MOSFET);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.853632

Filename

1498992