Title :
A 110-GHz large-signal lookup-table model for InP HEMTs including impact ionization effects
Author :
Orzati, Andrea ; Schreurs, Dominique M M -P ; Pergola, Luca ; Benedickter, Hansruedi ; Robin, Franck ; Homan, Otte J. ; Bächtold, Werner
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Abstract :
We developed an efficient method to extract a large-signal lookup table model for InP high electron-mobility transistors that takes impact ionization into account. By measuring the device on a logarithmic frequency scale, we obtain high resolution at lower frequencies to accurately characterize impact ionization, and a sufficient number of data points at millimeter-wave frequencies to extract the nonquasi-static parameters. Model validation through linear and nonlinear device measurements and its application to monolithic-microwave integrated-circuit design are presented.
Keywords :
III-V semiconductors; field effect MMIC; high electron mobility transistors; impact ionisation; indium compounds; integrated circuit design; millimetre wave field effect transistors; millimetre wave measurement; semiconductor device measurement; semiconductor device models; table lookup; 110 GHz; InP; InP HEMT; InP high electron-mobility transistors; data points; impact ionization; large-signal lookup table model; linear device measurements; logarithmic frequency scale measurement; measuring resolution; millimeter-wave frequencies; model validation; monolithic-microwave integrated-circuit design application; nonlinear device measurements; nonquasi-static parameters; Data mining; Frequency measurement; HEMTs; Impact ionization; Indium phosphide; MODFETs; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Table lookup;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2002.807823
