Title :
Evidence of reduced self-heating in strained Si MOSFETs
Author :
Nicholas, Gareth ; Grasby, Tim J. ; Parker, Evan H.C. ; Whall, Terry E. ; Skotnicki, Thomas
Author_Institution :
Dept. of Phys., Warwick Univ., Coventry, UK
Abstract :
Pulsed measurements are used to investigate self-heating in strained-Si MOSFETs. From analysis of the data at elevated temperatures, the thermal resistances of the devices are extracted. These are found to be considerably lower than that obtained with a widely used theory. Thermal device simulations demonstrate that the discrepancy is due to an additional conduction path through the field oxide to overlapping aluminum contacts.
Keywords :
Ge-Si alloys; MOSFET; aluminium; elemental semiconductors; heating; thermal resistance; Al; SiGe; conduction path; field oxide; overlapping aluminum contact; pulsed measurement; reduced self-heating; strained Si MOSFET; strained silicon; thermal device simulation; thermal resistance; CMOS technology; Electrical resistance measurement; Fabrication; Germanium silicon alloys; MOSFETs; Pulse measurements; Silicon germanium; Temperature measurement; Thermal conductivity; Thermal resistance; MOSFET; SiGe; self-heating; strained silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.854385
