DocumentCode
1147160
Title
A new oxide trap-assisted NBTI degradation model
Author
Jha, Neeraj K. ; Rao, V. Ramgopal
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol. Mumbai, India
Volume
26
Issue
9
fYear
2005
Firstpage
687
Lastpage
689
Abstract
Using detailed experimental data, we demonstrate that for the correct interpretation of negative bias temperature instability (NBTI) degradation behavior with stress time, it is essential to include the effect of trapping of hydrogen species in the oxide. A new oxide trap-assisted NBTI degradation model is proposed and shown to fit the experimental data very well. Our proposed model can also be used to explain the recently observed phenomenon of higher NBTI degradation for increasing nitrogen concentration in the oxide. We show from numerical calculations that, for higher nitrogen concentration at the interface, one would expect higher NBTI degradation, as also reported recently.
Keywords
MOSFET; electron traps; particle traps; semiconductor device models; surface diffusion; thermal stability; thermal stresses; hydrogen diffusion; hydrogen trapping; interface composition; interface trap generation; negative bias temperature instability; nitrogen concentration; numerical calculation; oxide trap-assisted NBTI degradation model; stress time; Degradation; Dielectrics; Equations; Hydrogen; MOS devices; Negative bias temperature instability; Niobium compounds; Nitrogen; Stress; Titanium compounds; Hydrogen diffusion; interface trap generation; negative bias temperature instability (NBTI); oxide trap;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2005.854389
Filename
1499000
Link To Document