DocumentCode
1147250
Title
Bipolar-FET Combinational Power Transistors for Power Conversion Applications
Author
Chen, Dan Y. ; Chin, Shaoan A.
Author_Institution
Virginia Polytechnic Institute and State University
Issue
5
fYear
1984
Firstpage
659
Lastpage
664
Abstract
Four bipolar-FET (field-effect transistor) combinational transistor configurations are compared from the application point of view. The configurations included are FET-Darlington (cascade), emitter-open switch (cascode), parallel configuration, and FET-gated bipolar transistors (FGT).
Keywords
Bipolar transistors; Breakdown voltage; FETs; Low voltage; NASA; Power conversion; Power transistors; Semiconductor diodes; Switches; Telecommunication switching;
fLanguage
English
Journal_Title
Aerospace and Electronic Systems, IEEE Transactions on
Publisher
ieee
ISSN
0018-9251
Type
jour
DOI
10.1109/TAES.1984.310534
Filename
4103967
Link To Document