Title :
Cryogenically cooled performance of a monolithic 44-GHz InP-based HEMT low-noise amplifier
Author :
Huei Wang ; Lo, D.C.-W. ; Lai, R. ; Cheng-Chih Yang ; Berenz, J.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
A monolithic 44-GHz low-noise amplifier using 0.1-μm pseudomorphic InAlAs/InGaAs/InP HEMT technology and its cryogenically cooled performance are reported. This single-stage MMIC amplifier has a measured noise figure of 2.5 dB with an associated gain of 8 dB at 44.5 GHz with 5-mW dc power consumption at room temperature. The noise temperature of this MMIC LNA decreases to 29 K (0.4-dB noise figure) and the associated gain increases to 10.3 dB when it is cooled down to 80 K under the same bias condition, which corresponds to an average noise temperature reduction slope of 0.9 and a gain increase slope of 0.01 dB//spl deg/K. To our knowledge, this is the first reported cryogenically cooled noise performance of a monolithic amplifier at this frequency.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; cryogenic electronics; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave amplifiers; millimetre wave receivers; 0.1 micron; 0.4 dB; 10.3 dB; 2.5 dB; 44 GHz; 5 mW; 8 dB; 80 K; HEMT low-noise amplifier; InAlAs-InGaAs-InP; average noise temperature reduction slope; bias condition; cryogenically cooled performance; gain increase slope; pseudomorphic HEMT technology; single-stage MMIC amplifier; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; MMICs; Noise figure; Noise reduction; Power amplifiers; Temperature;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
