Title :
InxGa1−x as surface channel quantum well MOSFET: Quantum ballistic simulation using mode space approach
Author :
Rahman, Ehsanur ; Shadman, Abir ; Biswas, Sudipta Romen ; Datta, Kanak ; Khosru, Quazi D. M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
In this paper, I-V characteristics of High k stack InGaAs surface channel Quantum Well MOSFET were simulated using Matlab. To simulate the device in quantum ballistic regime we used non equilibrium Green´s function formalism. Self-consistent solution of Schrodinger-Poisson equation was performed using FDM method taking 2D electrostatics into account. The charge is well confined in the quantum well. So, mode space approach is applicable & efficient. Simulation results for the Quantum Well device with 55nm gate length have been reported. Variation of I-V characteristics with the change in channel length has also been reported.
Keywords :
Green´s function methods; MOSFET; Schrodinger equation; electrostatics; gallium arsenide; high-k dielectric thin films; indium compounds; quantum well devices; stochastic processes; 2D electrostatics; FDM method; I-V characteristics; InxGa1-xAs; Matlab; Schrodinger-Poisson equation; channel length; high k stack; mode space approach; nonequilibrium Green function formalism; quantum ballistic simulation; size 55 nm; surface channel quantum well MOSFET; Effective mass; HEMTs; Indium gallium arsenide; Logic gates; MOSFET; Mathematical model; Simulation; 2D Electrostatics; High-k stack; IV Characteristics; Quantum well; Surface channel;
Conference_Titel :
Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
Conference_Location :
Kuala Lumpur
DOI :
10.1109/SMELEC.2014.6920800
