Wavelength conversion in a quantum well polarization insensitive amplifier

Author

Dubovitsky, S. ; Dapkus, P.D. ; Mathur, A. ; Steier, W.H.

Author_Institution

Center for Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA

Volume

6

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

804

Lastpage

807

Abstract

Polarization insensitivity of the gain saturation properties of a 1.3 μm semiconductor amplifier with tensile and compressive strain quantum well active region are used to demonstrate a WDM wavelength conversion configuration in which the outputs at the two wavelengths are separated on the basis of polarization. Use of orthogonal polarizations allows operation of a wavelength converter without an optical frequency filter at the output. Alternatively, inherent polarization insensitivity of the device can be used for wavelength conversion of an arbitrarily polarized signal.

Keywords

gallium arsenide; gallium compounds; indium compounds; internal stresses; laser transitions; light polarisation; optical communication equipment; semiconductor lasers; wavelength division multiplexing; 1.3 mum; InP-InGaAsP; WDM wavelength conversion configuration; arbitrarily polarized signal; compressive strain quantum well active region; gain saturation properties; polarization insensitivity; quantum well polarization insensitive amplifier; semiconductor amplifier; tensile strain quantum well active region; wavelength converter; Frequency conversion; Optical filters; Optical frequency conversion; Optical polarization; Optical saturation; Optical wavelength conversion; Semiconductor optical amplifiers; Stimulated emission; Tensile strain; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.311460

Filename

311460