Impact of different ground planes of UTBB SOI MOSFETs under the single-gate (SG) and double-gate (DG) operation mode

In this work, we investigate the impact of different ground planes of UTBB SOI MOSFETs under the single-gate (SG) and double-gate (DG) operation modes by numerical simulations. Simulations were performed for 10 nm gate length UTBB SOI MOSFET of 7 nm thin body (T_si) and 10 nm thin buried oxide (T_BOX) for V_d = 20 mV and 1.0 V. For DG operation mode, the back-gate (BG) and front-gate (FG) were swept simultaneously from 0 to 1.5 V with 10 mV incremental steps. Results reported are on key device parameters such as the threshold voltage (V_th), drain induced barrier lowering (DIBL), drive current (I_on), subthreshold swing (SS) and transconductance (g_m). Ground Plane (GP) - B structure which employed a p+ doping under the channel shows the best results under the DG operation mode in terms of the lowest DIBL and SS. However, it recorded a slightly higher V_th while the results of I_on and g_m are comparable with its other GP counterparts.