Design of flat-band AlGaAs heterojunction Bragg reflectors

Author

Yechuri, Sitaramarao S. ; Tsay-Jiu Brian Shieh ; Johnson, Ralph H.

Author_Institution

Dept. of Electr. Eng., Texas Univ., Arlington, TX, USA

Volume

43

Issue

1

fYear

1996

fDate

1/1/1996 12:00:00 AM

Firstpage

40

Lastpage

46

Abstract

Bragg reflectors using periodic AlGaAs heterojunction layers can be built into a light emitting diode to reduce the absorption in the substrate, or into a laser diode to form a cavity. In this paper, a numerical model for the design of low resistance flat-band p-type or n-type graded heterojunction reflectors is presented. It computes the required doping profile to achieve a flat conduction band or valence band across a graded junction, such that the reflector will add minimum series resistance to the devices

Keywords

III-V semiconductors; aluminium compounds; carrier density; doping profiles; gallium arsenide; laser mirrors; light emitting diodes; semiconductor device models; semiconductor doping; semiconductor heterojunctions; semiconductor lasers; AlGaAs; doping profile; flat conduction band; flat-band graded heterojunction reflectors; heterojunction Bragg reflectors; laser diode; light emitting diode; periodic heterojunction layers; series resistance; Algorithm design and analysis; Aluminum; Charge carrier processes; Current density; Dielectric constant; Electrons; Energy states; Heterojunctions; Photonic band gap; Poisson equations;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.477591

Filename

477591