Title :
A high speed burst mode optoelectronic integrated circuit photoreceiver using InP/InGaAs HBT´s
Author :
Lunardi, L. ; Chandrasekhar, S. ; Swartz, R.G. ; Hamm, R.A. ; Qua, G.J.
Author_Institution :
Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ, USA
fDate :
7/1/1994 12:00:00 AM
Abstract :
A novel monolithic differential photoreceiver has been realized using InP/InGaAs heterojunction bipolar transistors. This dc-coupled differential OEIC operated successfully with both continuous and burst-mode data streams up to 5 Gb/s with a sensitivity of -18.6 dBm for the continuous mode operation at a bit error rate of 10/sup -9/. There was a 1.5 dB penalty of the sensitivity value in burst-mode operation. This is the first demonstration of an OEIC for burst-mode operation at high speeds.<>
Keywords :
III-V semiconductors; bipolar integrated circuits; circuit switching; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; packet switching; sensitivity; 5 Gbit/s; InP-InGaAs; InP/InGaAs heterojunction bipolar transistor; bit error rate; burst-mode data streams; burst-mode operation; continuous data streams; continuous mode operation; direct current-coupled differential OEIC; high speed burst mode optoelectronic integrated circuit photoreceiver; monolithic differential photoreceiver; penalty; sensitivity; Detectors; Heterojunction bipolar transistors; High speed integrated circuits; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optoelectronic devices; PIN photodiodes; Photodetectors; Preamplifiers;
Journal_Title :
Photonics Technology Letters, IEEE
