Title :
A new analytical model of SRAM cell stability in low-voltage operation
Author :
Ichikawa, Tsutomu ; Sasaki, Masayoshi
Author_Institution :
Device Dev. Dept., Sony Corp., Kanagawa, Japan
fDate :
1/1/1996 12:00:00 AM
Abstract :
A new analytical model of MOS SRAM cell stability is presented as the measure of cell stability in low-voltage operation. The model individually deals with transistor parameters together with parasitic resistance in the cell. Mutual effects of cell-parameter variation on the lower limit of supply voltage is clarified for the first time. The V CCmin´s of a conventional cell and a split wordline (SWL) cell are evaluated under the consideration of fabricated cell patterns, and superiority of the SWL cell is shown. This superiority is mainly attributed to its simple layout of the MOSFETs in the cell rather than its symmetrical layout
Keywords :
MOS memory circuits; SRAM chips; cellular arrays; circuit stability; integrated circuit modelling; MOS SRAM cell; SRAM cell stability; analytical model; fabricated cell patterns; low-voltage operation; parasitic resistance; split wordline cell; transistor parameters; Analytical models; Breakdown voltage; Circuit stability; Electrical resistance measurement; Inverters; Low voltage; MOSFETs; Power dissipation; Random access memory; Stability analysis;
Journal_Title :
Electron Devices, IEEE Transactions on
