Title :
An InGaAs/GaAs MQW optical switch based on field-induced waveguides
Author :
Stohr, A. ; Humbach, O. ; Hulsewede, R. ; Wiersch, A. ; Jager, D.
Author_Institution :
Fachgebiet Optoelektronik, Duisburg Univ., Germany
fDate :
7/1/1994 12:00:00 AM
Abstract :
A novel optical waveguide switch containing InGaAs/GaAs multiple-quantum wells (MQW) is proposed. In this structure, a large field-induced refractive index increase (0.1%) due to the quantum-confined Stark effect (QCSE) is utilized to generate electrically controllable waveguides. Switching operation of a first fabricated device has been investigated at wavelengths of about 1 μm. A crosstalk ratio of -18.8 dB and an extinction ratio of 20.9 dB was achieved at a reverse voltage of -7 V. Within an operational wavelength region of 9 nm, crosstalk was found to be less than -13 dB for both switching conditions. Further, the proposed switch structure seems to be well suited for monolithic integration with laser diodes and exhibits the potential for high-speed operation.
Keywords :
III-V semiconductors; Stark effect; crosstalk; electro-optical devices; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical switches; optical waveguides; refractive index; semiconductor quantum wells; InGaAs-GaAs; InGaAs/GaAs MQW optical switch; InGaAs/GaAs multiple-quantum wells; crosstalk ratio; electrically controllable waveguides; extinction ratio; field-induced waveguides; high-speed operation; large field-induced refractive index; laser diodes; monolithic integration; operational wavelength region; optical waveguide switch; quantum-confined Stark effect; reverse voltage; switch structure; switching conditions; switching operation; Gallium arsenide; High speed optical techniques; Indium gallium arsenide; Optical crosstalk; Optical refraction; Optical switches; Optical variables control; Optical waveguides; Quantum well devices; Refractive index;
Journal_Title :
Photonics Technology Letters, IEEE
