Title :
Accelerated testing of SiO2 reliability
Author :
Rosenbaum, Elyse ; King, Joseph C. ; Hu, Chenming
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
1/1/1996 12:00:00 AM
Abstract :
This paper compares several popular accelerated test methods for projecting SiO2 lifetime distribution or failure rate: constant-voltage and constant-current time-to-breakdown and charge-to-breakdown tests, ramp-voltage breakdown test, and ramp-current charge to-breakdown test. Charge trapping affects the electric field acceleration parameter for time-to-breakdown and the value of breakdown voltage. Practical considerations favor ramp breakdown testing for gate oxide defect characterization. The effective thinning model is used for defect characterization and the ramp-voltage breakdown test is shown to be superior to the ramp-current QBD test for extraction of the defect distribution. Measurement issues are also discussed
Keywords :
MOS capacitors; electric breakdown; failure analysis; life testing; semiconductor device reliability; MOS capacitors; accelerated test methods; breakdown voltage; charge-to-breakdown tests; constant-current tests; constant-voltage tests; defect distribution; effective thinning model; electric field acceleration parameter; failure rate; gate oxide defect characterization; lifetime distribution; ramp-current test; ramp-voltage breakdown test; time-to-breakdown tests; Capacitors; Computerized monitoring; Design for quality; Electric breakdown; Electrodes; Electrons; Life estimation; Testing; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
