DocumentCode :
114748
Title :
A Study on the role of solvent on properties of GdxZn1−xO films synthesized by sol-gel method
Author :
Norhidayah, C.A. ; Kamaraddin, S.A. ; Nafarizal, N. ; Sahdan, Mohd Zainizan ; Nuralfadzilah, A.R. ; Tawil, S.N.M.
Author_Institution :
Microelectron. & Nanotechnol. Res. Center, Univ. Tun Hussein Onn Malaysia, Batu Pahat, Malaysia
fYear :
2014
fDate :
27-29 Aug. 2014
Firstpage :
108
Lastpage :
111
Abstract :
The increasing demand for high-performance and low cost optoelectronic devices motivates many researchers to develop more efficient transparent conductive oxide (TCO) films. Among the popular TCOs, the past decade has seen the emergence of zinc oxide (ZnO) as one of the potential materials for the fabrication of transparent conductive electrodes. The aim of this work is to study the influence of different solvents on the properties of GdxZn1-xO (x ≤ 0.01) films synthesized by sol-gel spin coating technique. Consequently, three different solutions were prepared with different solvents [2-Methoxyethanol (2-ME), ethanol (EtOH) and isopropanol (IPA)]. The structural, surface roughness and optical properties were investigated using an X-ray diffractometer (XRD, PANanalytical xpert-pro), atomic force microscope (AFM, Park XE-100) and ultra violet-visible spectrophotometer (UV-Vis, Shimadzu UV 1800), respectively. As a result, all films were found to have polycrystalline with hexagonal wurtzite structure. In addition, AFM analysis revealed that the film synthesized using EtOH exhibiting the smallest surface roughness of about 4.12 nm compared with IPA and 2-ME of about 5.12 nm and 12.22 nm, respectively. Also, the optical transmittance spectra indicate that all films exhibit good transparency in the visible spectral range with an average transmission of approximately 97.5%, 97.2% and 96.1% for EtOH, IPA and 2-ME, respectively. The optical band gap energy (Eg) values was estimated to be around 3.26 ~ 3.30 eV using Tauc´s model with the lowest value for IPA (3.26 eV) and highest for 2-ME (3.30 eV). In a nutshell, the solvents are playing a key role for controlling the growth and nucleation in the preparation of GdxZn1-xO solution and it strongly affects the properties of the film.
Keywords :
II-VI semiconductors; X-ray diffraction; atomic force microscopy; energy gap; gadolinium compounds; nucleation; optical constants; semiconductor growth; semiconductor thin films; sol-gel processing; spin coating; surface roughness; transparency; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; 2-methoxyethanol; AFM analysis; GdxZn1-xO; Tauc model; UV-vis spectra; X-ray diffractometry; XRD; atomic force microscopy; ethanol; hexagonal wurtzite structure; isopropanol; nucleation; optical band gap energy; optical properties; optical transmittance spectra; sol-gel spin coating technique; solvent effect; structural properties; surface roughness; thin films; transparency; ultraviolet-visible spectrophotometry; Optical films; Rough surfaces; Solvents; Surface roughness; Zinc oxide; Gadolinium(Gd); Sol-gel; Spin Coating; Transparent Conductive Oxide (TCO); Zinc oxide (ZnO);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
Conference_Location :
Kuala Lumpur
Type :
conf
DOI :
10.1109/SMELEC.2014.6920807
Filename :
6920807
Link To Document :
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