Multiple-layer optical interconnections using through-wafer hollow-dielectric-waveguide vias

We investigate lossy hollow-dielectric-waveguide vias in a dense optical interconnection system as a means by which many 2-D processor layers can communicate simultaneously with minimal signal attenuation. Via-guided multiple-layer signal attenuation and design guidelines are derived for both GaAs and Si substrate materials, and are compared to those for unguided interconnections at 0.85 μm and 1.3 μm. We find that optical interconnections using hollow-dielectric-waveguide vias can support dense low-loss interconnections at 0.85 μm, whereas propagation through the substrate is preferred at 1.3 μm.