Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 μm

Author

Cerutti, L. ; Garnache, A. ; Genty, E. ; Ouvrard, A. ; Alibert, C.

Author_Institution

Centre d´´Electronique et de Micro-optoelectronique de Montpellier, Univ. Montpellier II, France

Volume

39

Issue

3

fYear

2003

fDate

2/6/2003 12:00:00 AM

Firstpage

290

Lastpage

292

Abstract

The operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical external cavity surface emitting laser (VECSEL) emitting near 2.1 μm is reported. The epitaxial structure, grown on GaSb by molecular beam epitaxy consists of a GaSb/AlAsSb Bragg reflector and a GaInAsSb/AlGaAsSb active region. A TEM₀₀ low-divergence laser operation is demonstrated in quasi-CW (10 μs pulses, 10% duty cycle) from 250 up to 350 K. A threshold as low as 390 W/cm² at 250 K combined with a T₀ around 33 K has been measured.

Keywords

aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; molecular beam epitaxial growth; optical pumping; quantum well lasers; surface emitting lasers; 10 mus; 2.1 micron; 250 to 350 K; 33 K; GaInAsSb-AlGaAsSb; GaInAsSb/AlGaAsSb active region; GaSb; GaSb substrate; GaSb-AlAsSb; GaSb/AlAsSb Bragg reflector; LD pumped VCSEL; MQW VCSEL emission properties; Sb-based VECSEL; TEM₀₀ low-divergence laser operation; epitaxial structure; laser diode pump; low threshold VCSEL; molecular beam epitaxy; multiple quantum well; quantum-well VCSEL; quasi-CW; room temperature VCSEL; surface emitting laser; vertical external cavity SEL;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20030192

Filename

1179457