Title :
high power LED heat dissipation simulation analysis via heat sink fin variation
Author :
Retnasamy, Vithyacharan ; Sauli, Zaliman ; Vairavan, Rajendaran ; Taniselass, Steven ; Mamat, H.
Author_Institution :
Sch. of Microelectron. Eng., Univ. Malaysia Perlis (UniMAP), Arau, Malaysia
Abstract :
In this work, significance of heat sink fins numbers on the heat dissipation of single chip high power LED package was addressed. The investigation was carried out through simulation by utilizing Ansys version 11. In this work, the heat sink fin numbers were increased from 4 fins to 6 fins, 8 fins, 10 fins and 12 fins respectively. The heat dissipation were evaluated in terms of operating junction temperature, thermal resistance and von Mises stress of the LED chip. Results of the analysis showed that with the increment of heat sink fins, the surface area of the heat sink also increases which in turn reduces the junction temperature of the GaN chip.
Keywords :
III-V semiconductors; LED displays; cooling; gallium compounds; heat sinks; thermal resistance; wide band gap semiconductors; Ansys version; GaN; heat dissipation simulation analysis; heat sink fin numbers; junction temperature reduction; operating junction temperature; single chip high power LED package; thermal resistance; von Mises stress; Gallium nitride; Heat sinks; Junctions; Light emitting diodes; Resistance heating; Thermal resistance; Ansys; GaN chip; fin number; heat sink; high power LED; junction temperature; von Mises stress;
Conference_Titel :
Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
Conference_Location :
Kuala Lumpur
DOI :
10.1109/SMELEC.2014.6920813