• DocumentCode
    1147612
  • Title

    Distribution of base dopant for transit time minimization in a bipolar transistor

  • Author

    Winterton, S.S. ; Searles, S. ; Peters, C.J. ; Tarr, N.G. ; Pulfrey, D.L.

  • Author_Institution
    Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
  • Volume
    43
  • Issue
    1
  • fYear
    1996
  • fDate
    1/1/1996 12:00:00 AM
  • Firstpage
    170
  • Lastpage
    172
  • Abstract
    A means to determine the doping profile minimizing base transit time in a bipolar transistor is presented, assuming that the width of the neutral base is held constant. It is found that the optimum profile is not close to the exponential decrease from emitter to collector predicted by earlier studies
  • Keywords
    bipolar transistors; delays; doping profiles; iterative methods; semiconductor doping; base dopant; bipolar transistor; doping profile; neutral base width; transit time minimization; Bipolar transistors; Calculus; Charge carrier processes; Delay effects; Doping profiles; Equations; Heterojunction bipolar transistors; Quasi-doping; Silicon; Spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.477610
  • Filename
    477610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1147612