Title :
Distribution of base dopant for transit time minimization in a bipolar transistor
Author :
Winterton, S.S. ; Searles, S. ; Peters, C.J. ; Tarr, N.G. ; Pulfrey, D.L.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
fDate :
1/1/1996 12:00:00 AM
Abstract :
A means to determine the doping profile minimizing base transit time in a bipolar transistor is presented, assuming that the width of the neutral base is held constant. It is found that the optimum profile is not close to the exponential decrease from emitter to collector predicted by earlier studies
Keywords :
bipolar transistors; delays; doping profiles; iterative methods; semiconductor doping; base dopant; bipolar transistor; doping profile; neutral base width; transit time minimization; Bipolar transistors; Calculus; Charge carrier processes; Delay effects; Doping profiles; Equations; Heterojunction bipolar transistors; Quasi-doping; Silicon; Spontaneous emission;
Journal_Title :
Electron Devices, IEEE Transactions on
