Title :
High-Q factor frequency-temperature compensated sapphire Bragg distributed resonator
Author :
Tobar, M.E. ; Locke, C.R. ; Ivanov, E.N. ; Hartnett, John ; Piquet, O. ; Cros, D.
Author_Institution :
Dept. of Phys., Western Australia Univ., Nedlands, WA, Australia
fDate :
2/6/2003 12:00:00 AM
Abstract :
A new sapphire TE10δ resonator was constructed with a novel support structure made from sapphire and rutile. The amount of rutile was chosen to act as Bragg reflectors to reduce conductor losses while simultaneously aning the temperature coefficient of frequency. The resonator was confirmed to have an annulment temperature of -8°C and Q-factor of 65,000 limited by the dielectric loss tangent.
Keywords :
Q-factor; dielectric losses; dielectric resonators; distributed Bragg reflectors; microwave devices; sapphire; titanium compounds; -8 degC; Al2O3; Bragg reflectors; TE10δ resonator; TiO2; conductor losses reduction; dielectric loss tangent; frequency-temperature compensated resonator; high-Q factor resonator; microwave frequencies; rutile; sapphire Bragg distributed resonator; support structure; temperature coefficient of frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030234
