Large area MOS-gated power devices using high-current fusible links

Author

Venkatraman, Prasad ; Baliga, B. Jayant

Author_Institution

Power Products Div., Motorola Inc., Phoenix, AZ, USA

Volume

43

Issue

1

fYear

1996

fDate

1/1/1996 12:00:00 AM

Firstpage

172

Lastpage

174

Abstract

A new approach for improving the yield of large area MOS-gated power devices is described. This approach uses high-current fusible links of aluminum to isolate defective segments from the rest of the device. Unlike previously reported wafer repair techniques, the proposed approach does not require any additional processing. The testing procedure used in this method is suitable for automation and it does not affect the switching speed of the device. Power MOSFET´s and IGBT´s have been successfully fabricated using these fusible links to perform wafer repair

Keywords

MOS-controlled thyristors; insulated gate bipolar transistors; isolation technology; power MOSFET; semiconductor device testing; semiconductor technology; Al; IGBT; MOS-gated power devices; defective segment isolation; high-current fusible links; large area power devices; power MOSFET; switching speed; testing procedure; wafer repair; Bipolar transistors; Cutoff frequency; Doping profiles; Electron devices; Electron emission; Epitaxial growth; Photonic band gap; Silicon; Solid state circuits; Temperature control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.477611

Filename

477611