35-40 GHz monolithic VCOs utilizing high-speed GaInP/GaAs HBTs

Author

Riepe, K. ; Leier, H. ; Marten, A. ; Guttich, U. ; Dieudonne, J.M. ; Bachem, K.H.

Author_Institution

Res. Center, Daimler-Benz AG, Ulm, Germany

Volume

4

Issue

8

fYear

1994

Firstpage

274

Lastpage

276

Abstract

Design, fabrication and performance of Ka-band voltage-controlled oscillators (VCOs) are described. High-speed self-aligned GaInP/GaAs heterojunction bipolar transistors (HBTs) as active devices and varactor diodes using the base-collector junction of the HBT structure are implemented in the VCOs. The HBTs have an emitter area of 2×1.5 μm×10 μm and incorporate a highly carbon doped base layer and a thin GaInP hole barrier. Oscillators with center frequencies of 35, 37, and 40 GHz exhibit tuning ranges of up to 1 GHz and typical output powers of 1-3.5 dBm. Best measured phase-noise at 1 MHz off carrier is -107 dBc/Hz.

Keywords

III-V semiconductors; MMIC; bipolar integrated circuits; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave integrated circuits; microwave oscillators; tuning; varactors; variable-frequency oscillators; 35 to 40 GHz; GaInP-GaAs; Ka-band; fabrication; heterojunction bipolar transistors; high-speed GaInP/GaAs HBTs; highly C doped base layer; monolithic VCOs; thin GaInP hole barrier; varactor diodes; voltage-controlled oscillators; Carbon dioxide; Diodes; Fabrication; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Power generation; Tuning; Varactors; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.311496

Filename

311496