Performance evaluation of dual-channel armchair graphene nanoribbon field-effect transistor

Author

Azman, Adila Syaidatul ; Johari, Zaharah ; Ismail, Riyad

Author_Institution

Dept. of Electron. & Comput. Eng., Univ. Teknol. Malaysia, Shah Alam, Malaysia

fYear

2014

fDate

27-29 Aug. 2014

Firstpage

138

Lastpage

141

Abstract

Graphene has become a potential successor to silicon in electronic devices. In this paper, the performance of dual-channel armchair graphene nanoribbon field-effect transistor (AGNR FET) is investigated. Both physical and electrical properties of dual-channel AGNR FET are simulated using Atomistic Tool Kit from Quantum Wise. Their band structures and transmission spectra are analyzed. Current-voltage characteristic is then extracted and the performance of single and dual-channel AGNR FETs is compared. From the simulation, it is found that dual-channel AGNR FET exhibits significant improvement in ON current over two fold. Results obtained will give insight in the implementation of dual-channel AGNR FET for performance enhancement in future electronic devices.

Keywords

field effect transistors; graphene; nanoribbons; ON current; atomistic tool kit; band structures; current-voltage characteristic; dual-channel armchair graphene nanoribbon field-effect transistor; electrical properties; electronic devices; performance evaluation; physical properties; quantum wise; single channel AGNR FET; transmission spectra; Arrays; Electrodes; Field effect transistors; Graphene; Performance evaluation; Photonic band gap; armchair graphene nanoribbon; dual-channel; field-effect transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2014 IEEE International Conference on

Conference_Location

Kuala Lumpur

Type

conf

DOI

10.1109/SMELEC.2014.6920815

Filename

6920815